Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): the effects of temperature

The influence of substrate temperature on the growth rate, crystal grain size and SiO2 mask stability in the selective epitaxial growth of silicon carbide deposited from SiH4, C2H4 and HCl on silicon dioxide masked silicon (100) was investigated. Results showed that deposition at atmospheric pressure and a Cl/Si ratio of 50 provided good selectivity. Raising the substrate temperature from 950 to 1000 deg C increased the growth rate and the crystal size and enhanced the film's surface morphology.