Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin films transistors

Conduction and low frequency measurement was utilized to analyze the effect of channel doping by boron and phosphorous implantation on the performance of high-temperature processed polysilicon thin film transistors. The polysilicon doped with boron and phosphorous at a certain concentration were compared to undoped polysilicon before and after ion implantation of hydrogen. Results revealed that deep levels and exponential band tails of high density are present in the boron doped nonhydrogenated channel devices while channel doping with phosphorous showed distributed defect states.