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A study of substitutional nitrogen impurities in chemical vapor deposited diamond

Authors :
Sitch, P.K.
Jungnickel, G.
Kaukonen, M.
Porezag, D.
Frauenheim, Th.
Peerson, M.R.
Jackson, K.A.
Source :
Journal of Applied Physics. May 1, 1998, Vol. 83 Issue 9, p4642, 5 p.
Publication Year :
1998

Abstract

Research was conducted to examine the fourfold coordinate nature of N in chemical vapor deposited (CVD) diamond and tetrahedral amorphous carbon (ta-C). Measurements were based on a combination of density-functional methods at several levels of approximation used on supercell and cluster models. Results reveal that when the Fermi level, Ef falls below A1, N doping charge is transferred to the available deeper lying states.

Details

ISSN :
00218979
Volume :
83
Issue :
9
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.21010990