Laser-induced suppression of photocrystallization rate in amorphous selenium films

The crystallization of amorphous selenium films was conducted by exposing them to simultaneous irradiation of a 488.0 nm line of Ar+ and a 676.4 nm line of a Kr+ laser by cross-band-gap and sub-band-gap light irradiation. It was observed that the crystallized amorphous selenium films displayed Raman spectra similar to that of trigonal crystalline. Results indicate that the crystallization process is delayed when the material is expose to both of the sources simultaneously.