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Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)
- Source :
- Journal of Applied Physics. August 1, 1998, Vol. 84 Issue 3, p1383, 6 p.
- Publication Year :
- 1998
-
Abstract
- The surface morphology of ZnSe grown on GaAs(001) via metalorganic vapor phase epitaxy was studied to examine nucleation processes. The results showed that the initial nucleation was a function of the precursor that triggered the ZnSe growth. Differences in the initial nucleation process because of the starting precursors were attributed to the variation of the interface structures.
Details
- ISSN :
- 00218979
- Volume :
- 84
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.21032885