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Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)

Authors :
Funato, Mitsuru
Aoki, Satoshi
Fujita, Shizuo
Fujita, Shigeo
Source :
Journal of Applied Physics. August 1, 1998, Vol. 84 Issue 3, p1383, 6 p.
Publication Year :
1998

Abstract

The surface morphology of ZnSe grown on GaAs(001) via metalorganic vapor phase epitaxy was studied to examine nucleation processes. The results showed that the initial nucleation was a function of the precursor that triggered the ZnSe growth. Differences in the initial nucleation process because of the starting precursors were attributed to the variation of the interface structures.

Details

ISSN :
00218979
Volume :
84
Issue :
3
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.21032885