Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

A study was conducted to elucidate the long-range atomic ordering and phase separation processes in InGaN alloys grown by molecular beam epitaxy. Results revealed that films produced at substrate temperatures from 700 to 750 degrees C with indium concentration greater than 35% exhibit phase separation. Moreover, films produced at substrate temperatures from 650 up to 675 degrees C showed compositional inhomogeneity when the indium content was higher than 25%.