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Electric properties of Co-doped and Ni-doped beta-FeSi2

Authors :
Tani, Jun-ichi
Kido, Hiroyasu
Source :
Journal of Applied Physics. August 1, 1998, Vol. 84 Issue 3, p1408, 4 p.
Publication Year :
1998

Abstract

The electrical resistivity and Hall effect of Co-doped and Ni-doped beta-FeSi2 were quantified in the temperature range between 80 and 300 K. The results showed that the solid solution Fe1-xCoxSi2 is n type over the entire temperature range investigated, whereas the solid solution Fe1-yNiySi2 exhibited n type characteristics at temperatures beyond 160 K and p type tendencies below 160 K. At 300 K, the carrier concentration of Fe1-xCoxSi2 is one level higher than that of Fe1-yNiySi2.

Details

ISSN :
00218979
Volume :
84
Issue :
3
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.21032889