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Electric properties of Co-doped and Ni-doped beta-FeSi2
- Source :
- Journal of Applied Physics. August 1, 1998, Vol. 84 Issue 3, p1408, 4 p.
- Publication Year :
- 1998
-
Abstract
- The electrical resistivity and Hall effect of Co-doped and Ni-doped beta-FeSi2 were quantified in the temperature range between 80 and 300 K. The results showed that the solid solution Fe1-xCoxSi2 is n type over the entire temperature range investigated, whereas the solid solution Fe1-yNiySi2 exhibited n type characteristics at temperatures beyond 160 K and p type tendencies below 160 K. At 300 K, the carrier concentration of Fe1-xCoxSi2 is one level higher than that of Fe1-yNiySi2.
Details
- ISSN :
- 00218979
- Volume :
- 84
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.21032889