Influence of Al Mole fraction on the noise performance of GaAs//Al(sub x)Ga(sub 1-x)As HEMT's

The decline of the energy barrier at the heterojunction as the Al mole fraction is reduced causes the noise associated to this electrode to increase, thus, affecting the noise performance of GaAs/AlGaAs high electron mobility transistors. This was found in a study of the influence of the Al mole fraction on the intrinsic noise properties of GaAs/AlGaAs high electron mobility transistors, wherein P, R and C noise parameters and the minimum intrinsic noise figure are calculated.