Enhanced drain current of 4H-SiC MOSFETs by adopting a three-dimensional gate structure

Authors :: Nanen, Y.
Yoshioka, H.
Noborio, M.
Suda, J.
Kimoto, T.
Source :: IEEE Transactions on Electron Devices. Nov, 2009, Vol. 56 Issue 11, p2632, 6 p.
Publication Year :: 2009

Subjects :: Gates (Electronics) -- Structure
Gates (Electronics) -- Analysis
Metal oxide semiconductor field effect transistors -- Evaluation
Silicon carbide -- Electric properties
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