The role of carbon and dysprosium in Ni[Dy]Si:C contacts for Schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

Subjects

Subjects :

Metal oxide semiconductor field effect transistors -- Composition
Metal oxide semiconductor field effect transistors -- Structure
Nickel alloys -- Electric properties
Nickel alloys -- Mechanical properties
Semiconductor-metal boundaries -- Analysis
Silicon carbide -- Structure
Silicon carbide -- Electric properties
Silicon carbide -- Mechanical properties
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

56

Issue :

11

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.211529394