Photostimulated impurity absorption of ultrasound in semiconductor nanostructures

Research was conducted to examine the effects of impurity states associated with heterostructures on the absorption of ultrasound. The objective of the study was to set up a calculation for the photostimulated ultrasound absorption by acceptor impurities in GaAs/Ga(sub 1-x)Al(sub x)As quantum wells. Results demonstrate that any device made from quantum well systems can be utilized as efficient traveling-wave detectors for ultrasound.