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Influence of the amorphous/crystalline phase of [Zr.sub.1-x][Al.sub.x][O.sub.2] high-k layers on the capacitance performance of metal insulator metal stacks

Authors :
Paskaleva, Albena
Lemberger, Martin
Bauer, Anton J.
Weinreich, Wenke
Heitmann, Johannes
Erben, Elke
Schroder, Uwe
Oberbeck, Lars
Source :
Journal of Applied Physics. Sept 1, 2009, Vol. 106 Issue 5, 054107-1-054107-6
Publication Year :
2009

Abstract

The capacitance behavior of metal insulator metal (MIM) structures with [Zr.sub.1-x][Al.sub.x][O.sub.2] dielectrics and TiN metal electrodes is studied. The reactions between the oxidizing ambient and the bottom electrode during high-k deposition has resulted in structural changes and thus in generation of defects that cause a different electrical behavior of the two TiN/[Zr.sub.1-x][Al.sub.x][O.sub.2] interfaces at the top and the bottom electrode and a polarity asymmetry of the capacitance performance.

Details

Language :
English
ISSN :
00218979
Volume :
106
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.211660412