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Influence of the amorphous/crystalline phase of [Zr.sub.1-x][Al.sub.x][O.sub.2] high-k layers on the capacitance performance of metal insulator metal stacks
- Source :
- Journal of Applied Physics. Sept 1, 2009, Vol. 106 Issue 5, 054107-1-054107-6
- Publication Year :
- 2009
-
Abstract
- The capacitance behavior of metal insulator metal (MIM) structures with [Zr.sub.1-x][Al.sub.x][O.sub.2] dielectrics and TiN metal electrodes is studied. The reactions between the oxidizing ambient and the bottom electrode during high-k deposition has resulted in structural changes and thus in generation of defects that cause a different electrical behavior of the two TiN/[Zr.sub.1-x][Al.sub.x][O.sub.2] interfaces at the top and the bottom electrode and a polarity asymmetry of the capacitance performance.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.211660412