Bipolar resistive switching performance of the nonvolatile memory cells based on [(AgI).sub.0.2][([Ag.sub.2]Mn[O.sub.4]).sub.0.8] solid electrolyte films

Pulse laser deposition method and focused ion beam lithography are used for preparing resistive switching memory cells with polycrystalline [(AgI).sub.0.2][([Ag.sub.2]Mn[O.sub.4]).sub.0.8]) (AIMO) solid electrolyte films as storage medium on Si[O.sub.2]/Pt/Ti/Si substrates. The fast response speed and the good retention properties have shown that polycrystalline AIMO thin film can be used for the next generation nonvolatile memory.