Hybrid vertical architecture transistor with magnetic-field-dependent current amplification as organic magnetocurrent investigation tool

Hybrid vertical architecture transistors are prepared, which has shown magnetic-field dependent electrical characteristics by using tris-(8-hydroxyquinoline) aluminum ([Alq.sub.3]), sulfonated polyaniline (SPAN), and n-type silicon. The rate of electrons that cross emitter and base layers and reach the collector is shown to be affected by the magnetic field, which has led to magnetic-field-dependent common-emitter current gain larger than 1.