Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements

Authors :: Schifano, R.
Monakhov, E.V.
Vines, L.
Svensson, B.G.
Mtangi, W.
Auret, F.D.
Source :: Journal of Applied Physics. August 15, 2009, Vol. 106 Issue 4, 043706-1-043706-7
Publication Year :: 2009
Abstract: Several temperature dependent Hall effect measurements are conducted to determine the various defects observed in the virgin hydrothermally grown n-type ZnO samples. The results prove that the electron mobility in the compounds is affected by mainly two phenomenon, namely the ionized impurity-scattering and optical photon scattering.

Subjects :: Aluminum -- Electric properties
Aluminum -- Thermal properties
Hall effect -- Analysis
Photons -- Analysis
Semiconductors -- Composition
Semiconductors -- Electric properties
Zinc oxide -- Thermal properties
Zinc oxide -- Electric properties
Physics

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