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Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: a comparison for charge density occupation methods
- Source :
- Journal of Applied Physics. Oct 15, 2009, Vol. 106 Issue 8, 084510-1-084510-10
- Publication Year :
- 2009
-
Abstract
- The atomistic pseudopotential quantum mechanical calculations are used for analyzing the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. A partition method and a quasi-Fermi level method are the two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition that are tested and compared.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 106
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.213330056