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Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs

Authors :
Kalavagunta, Aditya
Silvestri, M.
Beck, M.J.
Dixit, S.K.
Schrimpf, Ronald D.
Reed, R.A.
Fleetwood, D.M.
Shen, L.
Mishra, U.K.
Source :
IEEE Transactions on Nuclear Science. Dec, 2009, Vol. 56 Issue 6, p3192, 4 p.
Publication Year :
2009

Subjects

Subjects :
Gates (Electronics) -- Electric properties
Protons -- Electric properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189499
Volume :
56
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
edsgcl.217004460

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