Junction isolation single event radiation hardening of a 200 GHz SiGE: C HBT technology without deep trench isolation

Subjects

Subjects :

Transistors -- Design and construction
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189499

Volume :

56

Issue :

6

Database :

Gale General OneFile

Journal :

IEEE Transactions on Nuclear Science

Publication Type :

Academic Journal

Accession number :

edsgcl.217018667