Self-consistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes

Subjects

Subjects :

Gallium compounds -- Electric properties
Gallium compounds -- Optical properties
Gallium compounds -- Mechanical properties
Indium -- Electric properties
Indium -- Optical properties
Indium -- Mechanical properties
Light-emitting diodes -- Analysis
Quantum wells -- Composition
Quantum wells -- Electric properties
Stress analysis (Engineering)
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189197

Volume :

45

Issue :

1-2

Database :

Gale General OneFile

Journal :

IEEE Journal of Quantum Electronics

Publication Type :

Academic Journal

Accession number :

edsgcl.217470543