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Observing two stage recovery of gate oxide damage created under negative bias temperature stress
- Source :
- Journal of Applied Physics. Jan 15, 2010, Vol. 107 Issue 2, 024508-1-024508-8
- Publication Year :
- 2010
-
Abstract
- The hysteresis is studied in threshold voltage shift during alternating gate bias ramps after negative bias temperature stress and the results are compared with charge pumping measurements. The studies have shown that the carrier trapping and detrapping characteristics of stress induced defects are controlled by temperature and electric field, but irrevocable structural relaxation is affected by temperature.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 107
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.220529664