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Observing two stage recovery of gate oxide damage created under negative bias temperature stress

Authors :
Aichinger, Thomas
Nelhiebel, Michael
Einspieler, Sascha
Grasser, Tibor
Source :
Journal of Applied Physics. Jan 15, 2010, Vol. 107 Issue 2, 024508-1-024508-8
Publication Year :
2010

Abstract

The hysteresis is studied in threshold voltage shift during alternating gate bias ramps after negative bias temperature stress and the results are compared with charge pumping measurements. The studies have shown that the carrier trapping and detrapping characteristics of stress induced defects are controlled by temperature and electric field, but irrevocable structural relaxation is affected by temperature.

Details

Language :
English
ISSN :
00218979
Volume :
107
Issue :
2
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.220529664