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Characteristics of an AlGaInP-based light emitting diode with an indium-tin-oxide (ITO) direct Ohmic contact structure
- Source :
- IEEE Journal of Quantum Electronics. Jan-Feb, 2010, Vol. 46 Issue 1-2, p246, 7 p.
- Publication Year :
- 2010
- Subjects :
- Aluminum alloys -- Electric properties
Aluminum alloys -- Optical properties
Gallium -- Electric properties
Gallium -- Optical properties
Indium -- Electric properties
Indium -- Optical properties
Light-emitting diodes -- Composition
Light-emitting diodes -- Electric properties
Light-emitting diodes -- Optical properties
Quantum wells -- Analysis
Tin compounds -- Electric properties
Tin compounds -- Optical properties
Business
Computers
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 46
- Issue :
- 1-2
- Database :
- Gale General OneFile
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.221315186