Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors

Authors :: Tian, Y.F.
Shi-shen Yan
Zhao, M.W.
Dai, Y.Y.
Zhang, Y.P.
Qiao, R.M.
Hu, S.J.
Chen, Y.X.
Liu, G.L.
Mei, L.M.
Qiang, Y.
Jiao, J.
Source :: Journal of Applied Physics. Feb 1, 2010, Vol. 107 Issue 3, 033713-1-033713-5
Publication Year :: 2010
Abstract: The preparation of a family of wide-band-gap ternary oxide ferromagnetic semiconductor films with high transition metal concentration is presented. The wide gap oxide ferromagnetic semiconductors with controllable spin-polarized electrical transport could find significant application in spintronics devices as a spin injection source.

Subjects :: Electron transport -- Analysis
Ferromagnetism -- Analysis
Spin coupling -- Analysis
Transition metals -- Electric properties
Transition metals -- Magnetic properties
Physics

Tools