A chip-level electrothermal-coupled design model for high-power light-emitting diodes

An advanced three-dimensional electrothemal-coupled simulation model basing on finite-element method numerical simulation is developed for analyzing the electrical and thermal properties of chip-level high-power GaN-based light-emitting diodes (LEDs). A thermal effective bump configuration is described and the results have shown that a lower average temperature and uniform heat distribution are obtained in the chips.