Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition

Authors :: Crupi, I.
Mirabella, S.
DEAngelo, D.
Gibilisco, S.
Grasso, A.
Di Marco, S.
Simone, F.
Terrasi, A.
Source :: Journal of Applied Physics. Feb 15, 2010, Vol. 107 Issue 4, 043503-1-043503-6
Publication Year :: 2010
Abstract: The article presents a complete analysis of the double sign anomaly of the Hall coefficient in the hydrogenated amorphous silicon (Si), which is usually formed by the plasma enhanced chemical vapor deposition technique. The various effects of the hydrogen content on the discussed anomaly are also studied.

Subjects :: Hall effect -- Analysis
Silicon compounds -- Electric properties
Hydrogen -- Electric properties
Chemical vapor deposition -- Analysis
Physics

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