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Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide

Authors :
SeonHoon Kim
Cianfrone, J.A.
Sadik, P.
Kim, K.-W.
Ivill, M.
Norton, D.P.
Source :
Journal of Applied Physics. May 15, 2010, Vol. 107 Issue 10, 103538-1-103538-5
Publication Year :
2010

Abstract

The properties of zinc-cobalt-oxide (Zn-Co-O) films deposited at room temperature by using pulsed laser deposition that display p-type conduction are described. Distinct rectifying current-voltage characteristics are seen for junctions between Zn-Co-O and n-type InGaZnO films, which has displayed a threshold voltage, and P-type Zn-Co-O is promising for thin-film electronic device technology.

Details

Language :
English
ISSN :
00218979
Volume :
107
Issue :
10
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.229572266