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Room temperature deposited oxide p-n junction using p-type zinc-cobalt-oxide
- Source :
- Journal of Applied Physics. May 15, 2010, Vol. 107 Issue 10, 103538-1-103538-5
- Publication Year :
- 2010
-
Abstract
- The properties of zinc-cobalt-oxide (Zn-Co-O) films deposited at room temperature by using pulsed laser deposition that display p-type conduction are described. Distinct rectifying current-voltage characteristics are seen for junctions between Zn-Co-O and n-type InGaZnO films, which has displayed a threshold voltage, and P-type Zn-Co-O is promising for thin-film electronic device technology.
- Subjects :
- Cobalt alloys -- Electric properties
Cobalt alloys -- Mechanical properties
Gallium -- Electric properties
Gallium -- Mechanical properties
Indium -- Electric properties
Indium -- Mechanical properties
Ablation (Vaporization technology) -- Usage
Zinc alloys -- Electric properties
Zinc alloys -- Mechanical properties
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 107
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.229572266