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Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

Authors :
Ramesh, V.
Kikuchi, A.
Kishino, K.
Funato, M.
Kawakami, Y.
Source :
Journal of Applied Physics. June 1, 2010, Vol. 107 Issue 11, 114303-1-114303-6
Publication Year :
2010

Abstract

Several nanotexturing InGaN/GaN multiple quantum wells are employed to explain the relaxation taking place in the lattice-mismatched strain by deep postetching. The various effects of the strain on the optical properties are also determined.

Subjects

Subjects :
Etching -- Usage
Gallium compounds -- Structure
Gallium compounds -- Electric properties
Gallium compounds -- Optical properties
Indium -- Electric properties
Indium -- Optical properties
Photoluminescence -- Analysis
Quantum wells -- Structure
Quantum wells -- Electric properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
107
Issue :
11
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.230021803

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