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High aspect ratio silicon etch: a review
- Source :
- Journal of Applied Physics. Sept 1, 2010, Vol. 108 Issue 5, 051101-1-051101-20
- Publication Year :
- 2010
-
Abstract
- The different technological methods, critical challenges and main theories of the technologies of the high aspect ratio (HAR) silicon etch are analyzed. HAR silicon etch is an application associated with microelectromechanical systems and the application for three-dimensional integrated circuit required HAR etch with high and stable throughput, controllable profile and surface properties.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 108
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.240773530