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High aspect ratio silicon etch: a review

Authors :
Banqiu Wu
Kumar, Ajay
Pamarthy, Sharma
Source :
Journal of Applied Physics. Sept 1, 2010, Vol. 108 Issue 5, 051101-1-051101-20
Publication Year :
2010

Abstract

The different technological methods, critical challenges and main theories of the technologies of the high aspect ratio (HAR) silicon etch are analyzed. HAR silicon etch is an application associated with microelectromechanical systems and the application for three-dimensional integrated circuit required HAR etch with high and stable throughput, controllable profile and surface properties.

Details

Language :
English
ISSN :
00218979
Volume :
108
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.240773530