Cite
Silicon carbide oxidation in the presence of cesium: modeling and analysis
MLA
Chatterjee, Aveek, et al. “Silicon Carbide Oxidation in the Presence of Cesium: Modeling and Analysis.” Journal of Applied Physics, vol. 108, no. 8, Oct. 2010, p. 083512. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.243584522&authtype=sso&custid=ns315887.
APA
Chatterjee, A., Hong Piao, Matocha, K., Fronheiser, J., Tilak, V., & Smentkowski, V. (2010). Silicon carbide oxidation in the presence of cesium: modeling and analysis. Journal of Applied Physics, 108(8), 083512.
Chicago
Chatterjee, Aveek, Hong Piao, Kevin Matocha, Jody Fronheiser, Vinayak Tilak, and Vincent Smentkowski. 2010. “Silicon Carbide Oxidation in the Presence of Cesium: Modeling and Analysis.” Journal of Applied Physics 108 (8): 083512. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.243584522&authtype=sso&custid=ns315887.