Modulation of the magnetism in ion implanted [Mn.sub.x][Ge.sub.1-x] thin films by rapid thermal anneal

The application of the rapid thermal annealing approach for the modulation of magnetism exhibited by the ion implanted [Mn.sub.x][Ge.sub.1-x] thin films is discussed. The technique is shown to be extremely beneficial for enhancing the inclusion of Mn ions in the Ge lattices of the films.