High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing oligoacences

A strategy is described for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. The demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes has provided new opportunities for designing high-performance ambipolar organic semiconductors.