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Physics-based model of planar-gate IGBT including MOS side two-dimensional effects

Authors :
Liqing Lu
Bryant, Angus
Hudgins, Jerry L.
Palmer, Patrick R.
Santi, Enrico
Source :
IEEE Transactions on Industry Applications. Nov-Dec, 2010, Vol. 46 Issue 6, p2556, 12 p.
Publication Year :
2010

Subjects

Subjects :
Bipolar transistors -- Models
Business
Computers
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00939994
Volume :
46
Issue :
6
Database :
Gale General OneFile
Journal :
IEEE Transactions on Industry Applications
Publication Type :
Academic Journal
Accession number :
edsgcl.249838475

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