Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures

Authors :: Nguyen, V. Hung
Bournel, A.
Dollfus, P.
Source :: Journal of Applied Physics. July 15, 2000, Vol. 88 Issue 2, 073718 -1-073718 -5
Publication Year :: 2000
Abstract: The article presents a complete analysis of the spin-polarized current and tunneling magnetoresistance exhibited by the different ferromagnetic gate bilayer graphene structures. The use of the structures for different spintronic applications is also discussed.

Subjects :: Graphene -- Magnetic properties
Graphene -- Electric properties
Graphene -- Structure
Ferromagnetism -- Analysis
Tunneling (Physics) -- Analysis
Physics

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