Sb-HEMT: toward 100-mV cryogenic electronics

Authors :: Noudeviwa, A.
Roelens, Y.
Danneville, F.
Olivier, A.
Wichmann, N.
Waldhoff, N.
Lepilliet, S.
Dambrine, G.
Desplanque, L.
Wallart, X.
Moschetti, G.
Grahn, J.
Bollaert, S.
Source :: IEEE Transactions on Electron Devices. August, 2010, Vol. 57 Issue 8, p1903, 7 p.
Publication Year :: 2010

Subjects :: Field-effect transistors -- Innovations
Indium -- Electric properties
Voltage -- Measurement
Simulation methods -- Usage
Business
Electronics
Electronics and electrical industries

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