Junction termination extension implementing drive-in diffusion of boron for high-voltage SiC devices

Subjects

Subjects :

Voltage -- Measurement
Electric power systems -- Innovations
Simulation methods -- Usage
Photolithography -- Usage
Silicon carbide -- Electric properties
Numerical analysis -- Usage
Business
Electronics
Electronics and electrical industries

Details

Language :

English

ISSN :

00189383

Volume :

57

Issue :

8

Database :

Gale General OneFile

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

edsgcl.317381183