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Researchers from Shanghai Institute of Technical Physics Report Findings in Chemical Vapor Deposition (The effects of substrate nitridation on the growth of nonpolar alpha-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition)
- Source :
- Science Letter. July 4, 2014, 409
- Publication Year :
- 2014
-
Abstract
- By a News Reporter-Staff News Editor at Science Letter -- A new study on Chemical Vapor Deposition is now available. According to news reporting originating in Shanghai, People's Republic of [...]
Details
- Language :
- English
- ISSN :
- 15389111
- Database :
- Gale General OneFile
- Journal :
- Science Letter
- Publication Type :
- News
- Accession number :
- edsgcl.373808754