Phenomenological aspects

An in-depth analysis of the phenomenon of gate current improvement upon application of a substrate voltage recently seen in deep submicron metal oxide semiconductor field effect transistors is presented. By studying the correlation between the gate and the substrate gate as a function, it is observed that the correlation offers an experimental signature of the onset of a new injection regime. The correlation is also shown to indicate a simple method for separating the substrate gate enhanced gate current component from the conventional channel hot electron one.