Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

MLA

Gaska, R., et al. “Two-Channel AlGaN/GaN Heterostructure Field Effect Transistor for High Power Applications.” Journal of Applied Physics, vol. 85, no. 5, Mar. 1999, p. 3009. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.54223110&authtype=sso&custid=ns315887.

APA

Gaska, R., Shur, M. S., Fjeldy, T. A., & Bykhovski, A. D. (1999). Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications. Journal of Applied Physics, 85(5), 3009.

Chicago

Gaska, R., M.S. Shur, T.A. Fjeldy, and A.D. Bykhovski. 1999. “Two-Channel AlGaN/GaN Heterostructure Field Effect Transistor for High Power Applications.” Journal of Applied Physics 85 (5): 3009. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.54223110&authtype=sso&custid=ns315887.