Pseudomorphic growth of ultrathin cubic 3C-SiC films on Si(100) by temperature programmed organometallic chemical vapor deposition

The large lattice mismatch between 3C-SiC and silicon of approximately 20% is decreased to less than or equal to 0.4% when the commensurability of five 3C-SiC to four Si lattice planes with one misfit dislocation parallel to the film/substrate interface can be used for the pseudomorphic growth. Several nanometer thin pseudomorphic films have been successfully produced. The production of voids in the silicon substrate because of Si evaporation can be strongly suppressed by a newly developed deposition process.