Theory for photoluminescence from SiO2 films containing Si nanocrystals and Er ions

Research was conducted to examine the phenomena of energy transfer from Si nanocrystals (nc-Si) to Er ions inside the SiO2 surrounding the nc-Si or at the nc-Si/SiO2 interface, and the origin of the characteristic double photoluminescence (PL) peaks in the SiO2 film containing nc-Si and Er ions. Results based on the quantum confinement-luminescence center model reveal that the PL peak at 1.53 eV most probably originates mainly from another type of defects or impurities in the SiO2 barrier or at the nc-Si/SiO2 interface.