Characteristics of p-channel polysilicon conductivity modulated thin-film transistors

A p-channel polysilicon conductivity modulated thin-film transistor has been designed and studied experimentally. The novel transistor shows a significant reduction in on-state resistance through conductivity modulation in the offset region. Conductivity modulation was realized by injecting minority carriers into the offset region through a diode added into the drain. Results indicate that conductivity modulation in the p-channel device is as effective as that in the n-channel device. There was an increase in the on-state current by 1.5 to 2 orders of magnitude compared to conventional offset drainthin-film transistors.