Mechanism of electrical conduction of Mn-doped beta-FeSi2

A study on the semiconducting phase of iron disilicide, beta-FeSi2 in relation to thermoelectric conversion applications was conducted to measure the Hall effect and electrical resistivity of Fe(sub 1-x)Mn(sub x)Si2 between 80 K and 300 K to clarify the mechanism of electrical conduction in Mn-doped beta-FeSi2. The ionized impurity scattering mechanism is used to explain the temperature dependence of the mobility of Fe(sub 1-x)Mn(sub x)Si2 at high temperatures.