Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides

Research was conducted to examine the behavior of As precipitation in low-temperature grown III-V arsenides and to correlate it with the doping level, dislocation density and crystal bond strength. Results indicate that the doping level affects the concentration of charged defects such as vacancy and antisite point defects and leads to the selective precipitation of excess As in homojunctions. Findings suggest that column III vacancies have an important role in As precipitation of low-temperature grown III-V arsenides.