Patterned growth on GaAs (311)A substrates: engineering of growth selectivity for lateral semiconductor nanostructures

Research was conducted to investigate the superposition of growth selectivity on patterned GaAs (311)A substrates at the intersection of fast and slow growing mesa sidewalls by molecular beam epitaxy. Surface morphologies can be explained by the straightforward addition of growth selectivity in terms of the amount and the direction of migrating adatoms. Results provide the basis for the formation of novel lateral semiconductor nanostructures on patterned GAAs (311)A substrates.