Improvement on P-channel SOI LDMOS transistor by adapting a new tapered oxide technique

A study on lateral double diffused metal oxide semiconductor field effect transistor structure on silicon-on-insulator (SOI) substrate developed a novel p-channel lateral double diffused metal oxide semiconductor structure on an SOI substrate with new tapered TEOS field oxides on the drift region. This novel device is designed to prevent boron out-diffusion at high temperature and reduce current path in the drift region, resulting in the improvement of device on-resistance.