A high performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator

A study was conducted to develop a high performance polycrystalline silicon thin film transistor supporting a silicon nitride gate insulator with three stacked layers. Low resistive NiSi silicides were integrated as gate/source/drain electrodes to minimize process steps. Si:H film obtained by plasma enhanced chemical vapor deposition was used as the starting material for laser annealing. The thin film transistor featured a field effect mobility of 2262 cm2/Vs and a threshold voltage of -1 V.