Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate

Research was conducted to examine the growth behavior of epitaxial CoSi2 layers o Si(100) substrate developed by rapid thermal annealing at 800 degrees C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The electrical properties of the p+n junction diode and the thermal stabilities of CoSi2 film and diodes were also investigated for their practical application to deep submicron devices. Results suggest that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000 degrees C and has potential application to the salicide process in subhalf micron devices.