Growth, microstructure and electronic properties of amorphous carbon nitride films investigated by plasma diagnostics

Research was conducted to examine the growth, microstructure and electronic properties of amorphous carbon nitride films (a-CN(sub x)) via plasma diagnostics. The objective was to correlate the variation in the structure, properties and growth rate of a-CN(sub x):H films with the relative concentrations of different radicals present in electron cyclotron resonance-radio frequency plasma as a function of nitrogen concentration.A proposed model that describes film growth and nitrogen incorporation in the films is presented.