Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors

The influence of well doping density on the performance of GaAs/AlGaAs p-type quantum well infrared photodetectors have been studied. Results show that detectors with 2D doping density from 1 to 2 X 10 to the 12th power per square cm can maximize background-limited infrared performance temperature and dark current-limited detectivity when operated at 100 K. It was also observed that peak absorption cannot be improved by merely increasing the 2D doping density in the well. However, increasing the doping density to 4 X 10 to the 12th power per square cm increases peak absorption by 1.5.