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Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors

Authors :
Wehrspohn, R.B.
Deane, S.C.
French, I.D.
Gale, I.
Hewett, J.
Powell, M.J.
Robertson, J.
Source :
Journal of Applied Physics. Jan 1, 2000, Vol. 87 Issue 1, p144, 11 p.
Publication Year :
2000

Abstract

Results show a a linear relationship between silicon-silicon bond strength whereas no correlation between silicon-hydrogen bond strength. Data suggest that highly stable and mobile thin film transistors required a dense amorphous silicon:hydrogen layer with compressive stress characteristics.

Details

ISSN :
00218979
Volume :
87
Issue :
1
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.59756266