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Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors
- Source :
- Journal of Applied Physics. Jan 1, 2000, Vol. 87 Issue 1, p144, 11 p.
- Publication Year :
- 2000
-
Abstract
- Results show a a linear relationship between silicon-silicon bond strength whereas no correlation between silicon-hydrogen bond strength. Data suggest that highly stable and mobile thin film transistors required a dense amorphous silicon:hydrogen layer with compressive stress characteristics.
Details
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.59756266