Structural evaluation of InAsP/In GaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy

Structural evaluation of InAsP/In GaAsP strained-layer superlattices has been carried out. Dislocations as grown by metal-organic molecular beam epitaxy were included. The change in a(parallel) is not equal to that of a(perpendicular) in the buffer layer, surprisingly. It is very probable that microplastic domains are generated in the buffer layer.